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2D PIC-MCC simulations of magnetron plasma in HiPIMS regime with external circuit

机译:2D PIP-MCC与外部电路中HIPIMS制度中的磁控血浆模拟

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2D particle simulations of plasma evolution in high power impulse magnetron sputtering (HiPIMS) are very scarce. Short HiPIMS unipolar pulses (4 ms plateau at constant-800 V) are applied on a planar magnetron cathode with a metal target operated in pure argon at 0.4 Pa. The model begins with a pre-ionised gas before the pulse, defined as a typical direct current (DC) discharge (-280 V, 100 mA). Applying the voltage pulse leads to a sharp increase in the current. The external circuit is reduced to a simple resistance connected in series with the discharge. Both the discharge and the resistance are fed by the HiPIMS power supply. HiPIMS voltage and current evolution during the pulse and the near afterglow are self-consistently obtained from the particle-incell Monte Carlo collision (PIC-MCC) simulation. Results for three values of the external resistance (1 kW, 500 W, and 250 W) show that, at least for this range, the pulse current plateau value is inversely proportional to the resistance, exceeding 2.5 A for the lowest resistance for 4 cm target diameter. Comparison with experiment shows that by reducing the external resistance to 12.5 W the pulse current exceeds 10 A, in agreement with the discharge voltage and current waveforms found in the model. The microscopic PIC-MCC approach gives access to a set of plasma parameters, some of which, close to the target, have never been explored before. Generally, the voltage drop across the ionisation region (IR) is found to be higher than the voltage in the cathode sheath (CS), in line with the prediction of the ionisation region model (IRM), emphasising the importance of Ohmic heating in HiPIMS. Additionally, the model shows that a transitory double layer separates the IR from the CS, as is also seen with probe measurements. The ambipolar diffusion feeds the diffusion region volume with a plasma density which is typically one order of magnitude below the average density in the IR that exceeds 2.5 ′ 1018 m-3 for the 250 W ex
机译:高功率脉冲磁控溅射(HIPIMS)中的等离子体演化的2D粒子模拟非常稀缺。短的Hip​​ims单极脉冲(恒定-800V的4 ms平台)施加在平面磁控管阴极上,在0.4 pa的纯氩气中使用金属靶。该模型在脉冲之前以预热的气体开头,定义为典型直流(直流)放电(-280 v,100 mA)。施加电压脉冲导致电流急剧增加。外部电路降低到与放电串联连接的简单电阻。通过HIPIMS电源供给放电和电阻。脉冲期间的Hipims电压和电流演化和近余釉是从粒子 - incell蒙特卡罗碰撞(PIC-MCC)仿真中的自始。结果对于外部电阻(1kW,500W和250 W)的三个值表明,至少在该范围内,脉冲电流平台值与电阻成反比,超过2.5A的电阻4厘米目标直径。与实验的比较表明,通过将外部电阻降低到12.5 W,脉冲电流超过10A,同时与模型中的放电电压和电流波形一致。显微镜照片MCC方法可以访问一组等离子体参数,其中一些靠近目标,从未探讨过。通常,发现电离区域(IR)上的电压降得高于阴极护套(CS)中的电压,与电离区域模型(IRM)的预测一致,强调欧姆加热在Hipims中的重要性。另外,该模型表明暂时性双层将IR与CS分离,如探测测量也看出。 Ambipolar扩散以等离子体密度馈送扩散区域体积,该等离子体密度通常是250W EX的IR中的平均密度低于25'1018M-3的一个级

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