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Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

机译:基于谐振 - 声子缺陷方案的太赫兹量子级联激光的能谱和热性能

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摘要

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) "parasitic" current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n (+)-GaAs conductive substrate based on Au-Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.
机译:基于由三个量子孔组成的级联,研究了电子级位置和转换振荡器强度的施加电场上的施加电场上的过渡振荡器强度。 在研究中的两个特征状态的电场强度计算:(i)当尚未达到激光阈值时,“寄生”电流在结构中流动; (ii)达到激光阈值。 模拟研究中的THz QCL中的热转印过程以确定最佳供应和冷却条件。 选择基于AU-Au的N(+) - GaAs导电基板的激光脊条条带的热压键合的条件被选为与较高的导热率产生机械更强的接触。

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  • 来源
    《Semiconductors》 |2017年第4期|共6页
  • 作者单位

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Russian Acad Sci Inst Ultrahigh Frequency Semicond Elect Nagornyi Pr 7 Str 5 Moscow 117105 Russia;

    Natl Res Univ Elect Technol MIET 4806 Proezd 5 Zelenograd 124498 Moscow Oblast Russia;

    St Petersburg Acad Univ Nanotechnol Res &

    Educ Ctr Russian Acad Sci Ul Khlopina 8-3 St Petersburg 194021 Russia;

    St Petersburg Acad Univ Nanotechnol Res &

    Educ Ctr Russian Acad Sci Ul Khlopina 8-3 St Petersburg 194021 Russia;

    St Petersburg Acad Univ Nanotechnol Res &

    Educ Ctr Russian Acad Sci Ul Khlopina 8-3 St Petersburg 194021 Russia;

    St Petersburg Acad Univ Nanotechnol Res &

    Educ Ctr Russian Acad Sci Ul Khlopina 8-3 St Petersburg 194021 Russia;

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  • 正文语种 eng
  • 中图分类 半导体物理学;
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