The Study of Electrophysical Characteristics of SOI MOSFETs in the Temperature Range from -60 to 250°C

摘要

The results of research, which aimed at developing high-temperature SOI MOSFETs, are presented. The possibility of stable MOSFETs work at the temperatures above 125°C was investigated. The TCAD simulation of the states of fully and partially depletion in the pockets of MOS transistors is carried out. According to research results and simulation, the parameters of the MOSFETs were changed for increasing its reliability at the high temperatures.