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机译:终止原子,孔隙率和钻井取向对多孔硅带结构的影响
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Shijiazhuang Tiedao Univ Dept Math &
Phys Shijiazhuang 050043 Peoples R China;
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Hebei Normal Univ Dept Phys Hebei Adv Thin Films Lab Shijiazhuang 050024 Peoples R China;
Porous silicon; Surface passivation; First-principles calculation; Porosity; Orientation;
机译:终止原子,孔隙率和钻井取向对多孔硅带结构的影响
机译:微波对氢封端的多孔硅纳米结构化学功能的影响
机译:形态学对多孔硅电子能带结构的影响
机译:孔隙度对共面波导多孔硅互连的影响
机译:气态氧原子与清洁的且被吸附物封端的硅(100)-(2x1)反应的量子化学计算。
机译:多孔硅的高塞贝克系数:孔隙率依赖性研究
机译:在氢封端的硅上的铝膜的定向有序脊结构