Tuning exchange bias in epitaxial Ni/MgO/TiN heterostructures integrated on Si(100)

摘要

Epitaxial Ni thin films are integrated with tunneling barrier MgO on Si(100) substrate. During pulsed laser deposition, early island-like structure transformed into uniform thin film with increasing number of laser pulses. This led to transitions in exchange bias from positive to negative and back to positive, which is ascribed to morphology associated residual strain. The Ni island structure has a coercive field as high as 3 times of that of the continuous film. The current work holds a tremendous promise in the realization of magnetic devices integrated with the Si-platform.