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首页> 外文期刊>Physical review, B >Ce 4f electronic states of CeO1-xFxBiS2 studied by soft x-ray photoemission spectroscopy
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Ce 4f electronic states of CeO1-xFxBiS2 studied by soft x-ray photoemission spectroscopy

机译:CE 4F CEO1-XFXBIS2的电子国家通过软X射线照相激光体进行研究

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摘要

We use soft x-ray photoemission spectroscopy (SXPES) to investigate Ce 4f electronic states of a new BiS2 layered superconductor CeO1-xFxBiS2, for polycrystalline and single-crystal samples. The Ce 3d spectrum of the single crystal of nominal composition x = 0.7 has no f(0) component and the spectral shape closely resembles the ones observed for Ce trivalent insulating compounds, strongly implying that the CeO layer is still in an insulating state even after the F doping. The Ce 3d-4f resonant SXPES for both polycrystalline and single-crystal samples shows that the prominent peak is located around 1 eV below the Fermi level (E-F) with negligible spectral intensity at EF. The F-concentration dependence of the valence band spectra for single crystals shows the increases of the degeneracy in energy levels and of the interaction between Ce 4f and S 3p states. These results give insight into the nature of the CeO1-xFx layer and the microscopic coexistence of magnetism and superconductivity in CeO1-xFxBiS2.
机译:我们使用软X射线照相机扫描光谱(SXPES)来研究新的BIS2层超导体CeO1-XFxbis2的CE 4F电子状态,用于多晶和单晶样品。标称组合物x = 0.7的单晶的CE 3D光谱没有F(0)组分,并且光谱形状非常类似于针对Ce三价绝缘化合物观察到的,强烈意味着CEO层即使之后仍然处于绝缘状态。 F掺杂。用于多晶和单晶样品的CE 3D-4F共振SXPES表明,突出峰位于FERMI水平(E-F)以下约1eV,在EF处具有可忽略的光谱强度。单晶价频谱光谱的F浓度依赖性显示出能级中的退化和CE 4F和S 3P状态之间的相互作用的增加。这些结果深入了解CEO1-XFX层的性质以及CEO1-XFXBIS2中的磁性和超导电性的显微静态共存。

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  • 来源
    《Physical review, B》 |2017年第8期|共9页
  • 作者单位

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory Tsukuba Ibaraki 3050801 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory Tsukuba Ibaraki 3050801 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory Tsukuba Ibaraki 3050801 Japan;

    High Energy Accelerator Res Org KEK Inst Mat Struct Sci Photon Factory Tsukuba Ibaraki 3050801 Japan;

    Hiroshima Univ Ctr Synchrotron Radiat Higashihiroshima 7390046 Japan;

    Univ Yamanashi Ctr Crystal Sci &

    Technol Kofu Yamanashi 4008511 Japan;

    Univ Yamanashi Ctr Crystal Sci &

    Technol Kofu Yamanashi 4008511 Japan;

    Univ Yamanashi Ctr Crystal Sci &

    Technol Kofu Yamanashi 4008511 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050047 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050047 Japan;

    Natl Inst Mat Sci Tsukuba Ibaraki 3050047 Japan;

    Tokyo Metropolitan Univ Dept Elect &

    Elect Engn Minami Ku Hachioji Tokyo 1920397 Japan;

    Tokyo Metropolitan Univ Dept Elect &

    Elect Engn Minami Ku Hachioji Tokyo 1920397 Japan;

    Okayama Univ Dept Phys Okayama 7008530 Japan;

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

    Okayama Univ Res Lab Surface Sci Okayama 7008530 Japan;

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  • 正文语种 eng
  • 中图分类 固体物理学;
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