Photoluminescent Si/SiO_x nanoparticle network by near atmospheric plasma-enhanced chemical vapour deposition

摘要

A very fast and simple near atmospheric plasma-enhanced chemical vapour deposition method modulated by a pulsed negative bias voltage is newly developed to yield a Si/SiO_x nanoparticle-linked network structure, which emitted enhanced 410 nm photoluminescence (PL) at room temperature. Hydrogen dissociation, oxidation and polarization of the silane plasma-generated active particles could be tuned by the magnitude of bias voltage. The porosity and oxidation of this network structure and the intensity of its PL spectrum at 410 nm were observed to increase with the bias voltage. The large surface area of the Si/SiO_x nanoparticle-linked network intensified the radiative recombination centre effect and caused the PL emission enhancement.