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首页> 外文期刊>Physical Review, B. Condensed Matter >Simulation of misfit dislocation loops at the Ag/Cu(111) interface
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Simulation of misfit dislocation loops at the Ag/Cu(111) interface

机译:Ag / Cu(111)界面失配位错环的仿真

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摘要

Molecular dynamics simulations combined with the nudged elastic band method for finding transition states and corresponding activation energies are used to study mechanisms of nucleation, growth, and motion of misfit dislocation loops at the Ag/Cu(111) interface. A variety of mechanisms involving concerted motion of several atoms are identified. Nucleation has the highest activation energy, similar to1 eV. Growth and motion of the loops have activation energies in the range 0.3-0.7 eV. [References: 15]
机译:分子动力学模拟与微动的弹性带方法相结合,以找到过渡态和相应的活化能,用于研究Ag / Cu(111)界面处错配位错环的成核,生长和运动机理。确定了涉及几个原子协调运动的多种机理。成核具有最高的激活能,类似于1 eV。回路的生长和运动具有0.3-0.7 eV范围内的激活能。 [参考:15]

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