机译:晶格错位在半相干{111}双金属接口中引起的错位位错演化
Department of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA;
Department of Mechanical Engineering University of California Santa Barbara CA 93106 USA;
Department of Mechanical and Aerospace Engineering University of Florida Gainesville FL 32611 USA;
Department of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta GA 30332 USA;
机译:溶质对双金属半相干界面脱位成核和界面滑动的影响
机译:高堆叠故障能量对半相干界面误操作脱位解离机制的影响
机译:MISFIT位错网络在半相干的混溶相位边界中:U-ZR接口的示例
机译:Cu / Nu(100)半相干界面的位错结构及其在晶格位错成核中的作用
机译:位于锑化镓/砷化镓界面的周期性错配位错阵列的结构,电学表征和模拟
机译:(111)半相干FCC接口中节点处的位错螺旋模式
机译:双金属界面上错配位错的协同解离
机译:应变外延层中线程位错逮捕的判据及其路径中的界面错配位错