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Lattice dislocation induced misfit dislocation evolution in semi-coherent {111} bimetal interfaces

机译:晶格错位在半相干{111}双金属接口中引起的错位位错演化

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摘要

The study of dislocation plasticity mediated by semi-coherent interfaces can aid in the design of certain heterostructured materials, such as nanolaminates. The evolution of interface misfit patterns under complex stress fields arising from dislocation pileups can influence local dislocation/interface interactions, including effects of multiple incoming dislocations. This work utilizes the Concurrent Atomistic-Continuum modeling framework to probe the evolution of misfit structures at semi-coherent Ni/Cu and Cu/Ag interfaces impinged by dislocation pileups generated via nanoindentation. A continuum microrotation metric is computed at various stages of the indentation process and used to visualize the evolution of the interface misfit dislocation pattern. The stress state from approaching dislocations induces mixed contraction and expansion of misfit dislocation structures at the interface. A lower number of misfit nodes per unit interface area coincides with greater localized deformation with regard to atoms near misfit nodes for Ni/Cu. The decreased misfit node spacing for Cu/Ag alternatively distributes the restructuring associated with plastic deformation over a larger percentage of atoms at the interface. Interface sliding facilitated by misfit dislocation motion is found to facilitate deformation extending into the bulk lattices centered on misfit nodes. The depth of penetration of those fields is found to be greater for Ni/Cu than for Cu/Ag.
机译:半相干界面介导的位错可塑性研究可以帮助设计某些异质结构材料,例如纳米胺。脱位堆积引起的复合应力场下的界面错入模式的演变可以影响局部位错/界面相互作用,包括多个进入脱位的效果。这项工作利用并发原子 - 连续内建模框架来探测MISFIT结构在半相干Ni / Cu和Cu / Ag界面上探测通过纳米狭窄产生的位错堆积的Cu / Ag界面。在压痕过程的各个阶段计算连续核微型扫描度量,并用于可视化界面错位错位脱位模式的演变。接近位错的应力状态会诱导界面处的混合脱位结构的混合收缩和膨胀。每个单元接口区域的较少数量的错入节点与Ni / Cu附近的原子原子相一致,具有更大的局部变形。用于Cu / Ag的减少的误操作节点间距可选地将与塑料变形相关的重组分布在界面处的较大百分比的原子上。发现由错配位移运动促进的界面滑动促进延伸到以错法节点为中心的散装格子延伸的变形。发现这些场的渗透深度比Cu / Ag更大,对于Ni / Cu而言更大。

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  • 来源
    《Journal of Materials Research》 |2021年第13期|2763-2778|共16页
  • 作者单位

    Department of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA;

    Department of Mechanical Engineering University of California Santa Barbara CA 93106 USA;

    Department of Mechanical and Aerospace Engineering University of Florida Gainesville FL 32611 USA;

    Department of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta GA 30332 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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