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首页> 外文期刊>Physica, B. Condensed Matter >Effect of neodymium substitutions on electromagnetic properties in low temperature sintered NiCuZn ferrite
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Effect of neodymium substitutions on electromagnetic properties in low temperature sintered NiCuZn ferrite

机译:钕替代对低温烧结NiCuZn铁氧体电磁性能的影响

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Nd3+ ions substituted Ni0.37Cu0.14Zn0.52Fe2O4 (Nd3+ ions content = 0, 0.01, 0.04, 0.6, 1.5 wt%) were prepared by the usual standard ceramic method at 1030 degrees C sintering temperature, and the composition dependence of the physical and magnetic properties has been investigated. SEM micrographs and EDX analysis revealed that it is no obvious impurities up to Nd3+ ions content wt%=0.04. For higher Nd3+ ions content samples (0.6 and 1.5 wt%), there are two kind of impurities Cu-rich and Nd-rich iron oxide phase. The saturation magnetization of the 0.01 wt% Nd3+ ions content sample is higher as result of that the A-B sites distance and YK-angles are shorter and smaller. The saturation magnetization of 0.04-1.5 wt% Nd3+ ion content sample are reduced, since the total magnetic moments of the AB site are decreased. For the 0.6 wt% sample, the Curie temperature increasing is as result of the Cu-rich iron oxide separating out. The maximum enhancements of permeability p' are improved to 11.2% (0.04 wt%) and 29.2% (0.6 wt%) at the 6.7 and 13.8 MHz, respectively. However, it is notice that small amount substitutions of Nd3+ increase the high frequency electromagnetic characteristics, can be applied to NFC technology and WPT technologies. (C) 2015 Elsevier B.V. All rights reserved.
机译:在1030℃的烧结温度下,通过通常的标准陶瓷法,制备了取代Ni0.37Cu0.14Zn0.52Fe2O4的Nd3 +离子(Nd3 +离子含量= 0、0.01、0.04、0.6、1.5重量%),其组成与物理,化学性质有关。已经研究了磁性。 SEM照片和EDX分析表明,当Nd3 +离子含量为wt%= 0.04时,没有明显的杂质。对于较高Nd3 +离子含量的样品(0.6和1.5 wt%),存在两种杂质:富Cu和富Nd的氧化铁相。 0.01 wt%Nd3 +离子含量样品的饱和磁化强度较高,这是因为A-B位置距离和YK角越来越短。由于AB部位的总磁矩减小,因此饱和Nd3 +离子含量为0.04-1.5 wt%的样品的磁化强度减小。对于0.6 wt%的样品,居里温度升高是由于富铜氧化铁分离出来的结果。磁导率p′的最大增强分别在6.7和13.8MHz处被提高到11.2%(0.04wt%)和29.2%(0.6wt%)。但是,应注意,少量的Nd3 +替代会增加高频电磁特性,可以应用于NFC技术和WPT技术。 (C)2015 Elsevier B.V.保留所有权利。

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