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首页> 外文期刊>Physica, B. Condensed Matter >Violet luminescence emitted from Ag-nanocluster doped ZnO thin films grown on fused quartz substrates by pulsed laser deposition
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Violet luminescence emitted from Ag-nanocluster doped ZnO thin films grown on fused quartz substrates by pulsed laser deposition

机译:脉冲激光沉积在熔融石英衬底上生长的Ag-纳米团簇掺杂的ZnO薄膜发出的紫光

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摘要

Silver nanocluster doped ZnO thin films were fabricated on fused quartz substrates at different temperatures by pulsed laser deposition (PLD) using a silver-ZnO mosaic target. X-ray diffraction (XRD) measurements showed that ZnO and doped silver nanoclusters crystallized with preferred c-axis orientation. Scanning electron microscopic (SEM) images of the sample fabricated at 450 degrees C and the X-ray photoelectron spectroscopy (XPS) showed the radius of the silver clusters to be about 3-16 nm. Under 266 nm laser excitation, the photoluminescence (PL) spectra exhibited a peak at 414-420 nm for silver nanocluster doped ZnO thin films deposited at different temperatures. Through the investigation of the energy level of the defects in ZnO thin films, the energy levels of the zinc vacancy (VznEVzn = 3.031eV) and the interstitial zinc atom (Zn-i, E-Zn, = 2.95 eV) were found to be consistent with the peak wavelengths of 414 and 420 run. We suggest that this violet emission originates from an electronic transition between the interstitial-zinc level and the valence band, or between the bottom of the conduction band and the V(Zn)level. (c) 2005 Elsevier B.V. All rights reserved.
机译:通过使用银-ZnO镶嵌靶材的脉冲激光沉积(PLD),在不同温度下在熔融石英衬底上制备了掺杂有纳米银团簇的ZnO薄膜。 X射线衍射(XRD)测量表明,ZnO和掺杂的银纳米团簇以优选的c轴取向结晶。在450摄氏度下制作的样品的扫描电子显微镜(SEM)图像和X射线光电子能谱(XPS)显示,银簇的半径约为3-16 nm。在266 nm激光激发下,光致发光(PL)光谱在414-420 nm处出现了在不同温度下沉积的银纳米团簇掺杂的ZnO薄膜的峰值。通过研究ZnO薄膜中缺陷的能级,发现锌空位(VznEVzn = 3.031eV)和间隙锌原子(Zn-i,E-Zn,= 2.95 eV)的能级为与414和420峰值波长一致。我们建议这种紫光发射源于间隙锌水平和价带之间或导带底部和V(Zn)水平之间的电子跃迁。 (c)2005 Elsevier B.V.保留所有权利。

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