...
首页> 外文期刊>Chemical Physics Letters >Photoexcitation quenching and interfacial electronic structures of photo-oxidized MEH-PPV film on gold studied using two-photon photoemission spectroscopy
【24h】

Photoexcitation quenching and interfacial electronic structures of photo-oxidized MEH-PPV film on gold studied using two-photon photoemission spectroscopy

机译:双光子光发射光谱研究金上光氧化MEH-PPV薄膜的光激发猝灭和界面电子结构

获取原文
获取原文并翻译 | 示例
           

摘要

We study quenching mechanism of long-lived photoexcitations and interfacial electronic structures of photo-oxidized MEH-PPV on gold using two-photon photoemission spectroscopy, in comparison with unannealed and annealed films. The work function of 3.95 eV is not changed by photo-oxidation while the yield and kinetics of photoexcitations are significantly influenced by photo-oxidation. Upon photo-oxidation, we observed narrowing of photoemission distribution at higher photon energy, attributed to lowering of an intermediate state level and/or quenching of the photoexcitation state. The photoemission yield at higher-lying photoexcitations quenches dramatically, understood by charge transfer toward defects, consistent with first-order kinetics - increase in power law slope. (c) 2007 Elsevier B.V. All rights reserved.
机译:我们使用双光子光电子能谱研究了与未退火和退火的薄膜相比,金上光氧化的MEH-PPV的长寿命光激发和界面电子结构的猝灭机理。光氧化不会改变3.95 eV的功函数,而光氧化的产率和动力学却会受到显着影响。在光氧化后,我们观察到在较高光子能量下光发射分布变窄,这归因于中间态能级的降低和/或光激发态的猝灭。高阶光激发下的光发射产率急剧淬灭,可以理解为电荷向缺陷的转移,这与一阶动力学一致-幂律斜率增加。 (c)2007 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号