The data analysis technique of the atomic force microscopy for the atomically flat silicon surface

摘要

Atomically flat (100) silicon surface constructed with atomic terraces and steps is realized by argon annealing at 1200℃ on (100) crystal orientation large diameter wafers with precisely controlled tilt angle. An atomic terraces and steps of (100) silicon surface can be measured as an image data by the atomic force microscopy (AFM). In order to discuss the flatness and the uniformity of the atomically flat silicon surface, it is important to evaluate the roughness of each terrace. In this paper, the data analysis technique of the atomic terraces and steps of (100) silicon surface will be proposed.