...
首页> 外文期刊>電子情報通信学会技術研究報告. 電子デバイス. Electron Devices >Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
【24h】

Novel-Functional Single-Electron Devices Using Silicon Nanodot Array

机译:使用硅纳米点阵列的新型功能单电子器件

获取原文
获取原文并翻译 | 示例
           

摘要

We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.
机译:我们演示了一种功能强大的Si纳米点阵列器件,该器件可通过单电子效应进行操作。该器件具有许多输入门,并且可以连接许多输出。使用常规的Si MOS工艺在绝缘体上硅晶片上制造了具有三个输入栅极和两个输出端子的纳米点阵列器件。当仔细选择工作电压时,它既可以用作半加器又可以用作全加器,证明了其可行性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号