Thermally deposited Ag-doped CdS transistors with rare-earth oxide Nd_20_3 as gate dielectric

摘要

The performance of thermallydeposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd_2О_3 has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 μm The thin film transistors exhibit a high mobility of 4.3 cm~2V~(-1)_s~(-1) and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 10~5. The transistors also exhibit good transconductance and gain band-wdth product of 1.15 ? 10~(-3) mho and 71 kHz respectively.