Investigation of Jet Vapor Deposited (JVD) Silicon Oxide/Nitride/Oxide (ONO) Films as Gate Dielectrics for SiC and GaN Devices.

摘要

Jet vapor deposited (JVD) silicon dioxide-nitride-dioxide (ONO) films are investigated as gate dielectrics for SiC MOS transistors and GaN high- electron-mobility transistors (HEMTs). The JVD process employs supersonic jets of a light carrier gas such as helium to transport depositing vapor from the source to the substrate. The high impact energies of the depositing species allow the use of room-temperature substrate, which contributes to improved film quality.