Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO_2 Substrates

摘要

Microcrystalline Si_(1-x)Ge_x (x～0.8) has been successfully deposited over SiO_2 substrates by magnetron sputtering. Detailed investigation about the deposition condition revealed that crystalline phase begins to form at about 300℃, which roughly correspond to half the melting temperature of the material where surface migration of deposited atom starts to take place. Substrate bias effect was also investigated, which showed the degradation of crystallinity for the substrate temperature of 350℃ while improvement of crystallinity was found for 300℃ samples.