Studies on electron beam evaporated CuIn{sub}0.80Ga{sub}0.20Se{sub}2 thin films

摘要

CuIn{sub}0.80Ga{sub}0.20Se{sub}2 bulk has been prepared by direct reaction of elemental copper, indium, gallium and selenium (Sigma Aldrich, 99.99%). CIGS thin films have been prepared onto well-cleaned glass and silicon (111) substrates by electron beam deposition technique. The structural properties of the deposited films have been ascertained by x-ray diffraction technique. The as-deposited CIGS films have been found to be amorphous in nature. To study the effect of annealing on the structural properties, the films have been annealed in vacuum with a base pressure of 10{sup}(-1) Torr. The x-ray diffractograms of the annealed CIGS films exhibited peaks revealing that the annealed films are crystalline in nature with tetragonal chalcopyrite structure. The micro structural parameters like grain size, dislocation density and strain have been calculated. The composition of the deposited CIGS films has been identified using energy dispersive x-ray analysis. The surface topographical study on the films has been performed by AFM tapping mode. The thickness of the films has been determined by multiple beam interferometry technique. CIGS based solar cells have been fabricated and the efficiency has been determined.