EFFECT OF OXYGEN PARTIAL PRESSURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS

摘要

Thin films of tantalum oxide were formed on quartz and silicon (111) substrates using rf magnetron sputtering technique by sputtering of pure tantalum target under various oxygen partial pressures in the range 5×10{sup}(-5) - 5×10{sup}(-4) mbar. The films were characterized by study the chemical binding configuration, crystal structure and optical properties. The influence of oxygen partial pressure in the structural and optical properties was systematically studied.