Characterization of μcSi:H/aSi:H films for solar cell applications with C-V and DLTS measurements

摘要

Micro-crystalline aSi:H films are grown by RF glow discharge on fabricated p-n junction silicon solar cells. The MIS structures fabricated on textured solar cells are characterized by C-V measurement in dark and under laser illumination. The temperature dependence and hysteresis effects on C-V measurements are also investigated. An interesting temperature dependence of the capacitance voltage characteristics is observed. The DLTS measurements only confirm the existence of O.54eV electron trap. Some other features of the trapping dynamics are also discussed. There is an improvement in the efficiency of aSi:H/μcSi:H coated solar cells which is explained on the basis of formation of two hetero-junctions.