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首页> 外文期刊>Journal of Semiconductors >An RF front-end with an automatic gain control technique for a U/V band CMMB receiver
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An RF front-end with an automatic gain control technique for a U/V band CMMB receiver

机译:具有自动增益控制技术的RF前端,用于U / V波段CMMB接收器

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摘要

This paper presents a fully integrated RF front-end with an automatic gain control (AGC) scheme and a digitally controlled radio frequency varied gain amplifier (RFVGA) for a U/V band China Mobile Multimedia Broadcasting (CMMB) direct conversion receiver. The RFVGA provides a gain range of 50 dB with a 1.6 dB step. The adopted AGC strategy could improve immunity to adjacent channel signal, which is of importance for CMMB application. The front-end, composed of a low noise amplifier (LNA), an RFVGA, a mixer and AGC, achieves an input referred 3rd order intercept point (IIP3) of 4.9 dBm with the LNA in low gain mode and the RFVGA in medium gain mode, and a less than 4 dB double side band noise figure with both the LNA and the RFVGA in high gain mode. The proposed RF front-end is fabricated in a 0.35 μm SiGe BiCMOS technology and consumes 25.6 mA from a 3.0 V power supply.
机译:本文介绍了一种用于U / V频段中国移动多媒体广播(CMMB)直接转换接收机的,具有自动增益控制(AGC)方案和数字控制的射频可变增益放大器(RFVGA)的完全集成的RF前端。 RFVGA以1.6 dB的步进提供50 dB的增益范围。采用的AGC策略可以提高对相邻信道信号的抗扰性,这对于CMMB应用至关重要。前端由低噪声放大器(LNA),RFVGA,混频器和AGC组成,在低增益模式下LNA和中等增益下的RFVGA时,实现了4.9 dBm的输入参考三阶截点(IIP3)。 LNA和RFVGA都处于高增益模式时,双边带噪声系数小于4 dB。拟议的RF前端采用0.35μmSiGe BiCMOS技术制造,并通过3.0 V电源消耗25.6 mA电流。

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