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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Liquid-phase-deposited barium titanate thin films on silicon
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Liquid-phase-deposited barium titanate thin films on silicon

机译:硅上液相沉积钛酸钡薄膜

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Using a mixture of hexafluorotitanic acid, barium nitrate and boric acid, high refractive index (1.54) barium titanate films can be deposited on silicon substrates. The deposited barium titanate films have featureless surfaces. The deposition temperature is near room temperature (80degreesC). However, there are many fluorine and silicon incorporations in the films. The refractive index of the as-deposited film is 1.54. By current-voltage measurement, the leak-age current of the as-deposited film with a thickness of 1000 Angstrom is about 9.48 x 10(-7) A cm(-2) at the electrical field intensity of 0.3 MV cm(-1). By capacitance-voltage measurement, the effective oxide charge of the liquid-phase-deposited barium titanate film is 3.06 x 10(11) cm(-2) and the static dielectric constant is about 22. [References: 15]
机译:使用六氟钛酸,硝酸钡和硼酸的混合物,可以在硅基板上沉积高折射率(1.54)的钛酸钡薄膜。沉积的钛酸钡膜具有无特征的表面。沉积温度接近室温(80℃)。然而,膜中有许多氟和硅结合。所沉积的膜的折射率为1.54。通过电流电压测量,在0.3 MV cm(-1)的电场强度下,厚度为1000埃的沉积膜的泄漏电流为9.48 x 10(-7)A cm(-2)。 )。通过电容电压测量,液相沉积的钛酸钡薄膜的有效氧化物电荷为3.06 x 10(11)cm(-2),静态介电常数约为22。[参考文献:15]

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