首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Fabrication of metallic patterns on highly curved substrates via nanoimprint lithography in association with an etch-in process
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Fabrication of metallic patterns on highly curved substrates via nanoimprint lithography in association with an etch-in process

机译:结合刻蚀工艺,通过纳米压印光刻技术在高度弯曲的基板上制造金属图案

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摘要

In this paper, we demonstrate the fabrication of metallic patterns on both planar and highly curved substrates via nanoimprint lithography in association with an etch-in process. First, the resist pattern is fabricated on the surface of a metal coated substrate via UV-curing nanoimprint lithography using a hybrid soft nanoimprint mold and the double transfer method. After the resist pattern was etched through by reactive ion etching (RIE), the sample is immersed in an etchant to fabricate metallic patterns using the resist pattern as the etching mask. An ammonium cerium nitrate/acetic acid system is used as the etchant to fabricate Cr patterns and the Fe3+/thiourea etching system is used to fabricate Au patterns. High quality 70 nm deep Cr gratings and 80 nm deep Au gratings with 550 nm pitch and 275 nm linewidth are obtained. Additionally, the linewidth of Cr patterns can be tuned from 275 nm to 95 nm by changing the etching time. Furthermore, a 550 nm pitch Cr grating is patterned on the cylindrical surface of a 125 gm-diameter optical fiber and a surface relief fiber Bragg grating with a groove depth of 330 nm is fabricated via RIE using the Cr mask. This method is universally used for fabricating metallic patterns on different substrates and it greatly widens the process window compared to the lift-off process.
机译:在本文中,我们通过与蚀刻工艺相关的纳米压印光刻技术,证明了在平面和高度弯曲的基板上都可以制造金属图案。首先,使用混合的软纳米压印模具和双转印法,通过UV固化纳米压印光刻法在金属涂覆的基板的表面上制造抗蚀剂图案。在通过反应离子蚀刻(RIE)蚀刻抗蚀剂图案之后,将样品浸入蚀刻剂中以使用抗蚀剂图案作为蚀刻掩模来制造金属图案。硝酸铈铈铵/乙酸系统用作蚀刻剂以制作Cr图案,Fe3 + /硫脲蚀刻系统用于制作Au图案。获得了具有550 nm间距和275 nm线宽的高质量70 nm深Cr光栅和80 nm深Au光栅。此外,可以通过更改蚀刻时间将Cr图案的线宽从275 nm调整到95 nm。此外,在直径为125gm的光纤的圆柱形表面上构图550nm间距的Cr光栅,并且使用Cr掩模通过RIE制造具有330nm凹槽深度的表面浮雕光纤布拉格光栅。该方法普遍用于在不同基板上制造金属图案,并且与剥离工艺相比,它大大拓宽了工艺窗口。

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