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Investigation of the structure-property relationship of thiadiazoloquinoxaline-based copolymer semiconductors via molecular engineering

机译:通过分子工程研究噻二唑并喹喔啉类共聚物半导体的结构-性质关系

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Six thiadiazoloquinoxaline (TQ) based copolymers (P1-P6) have been synthesized using Stille coupling reaction upon varying donor moieties, substitution positions and architectures of polymer side chains. UV-vis-NIR absorption spectra indicated that all of these polymers exhibited low optical bandgaps from 0.96 to 0.75 eV. The electron affinities of these six polymers with values from -3.92 to -3.99 eV slightly changed due to the contribution of the same TQ core. However, the ionization potentials were tuned from -4.95 eV in P1 to -5.28 eV in P3 by introducing different donors. Comparing polymers P1-P4 with different donor parts, two dimensional wide-angle X-ray scattering measurements implied that P4 had a higher crystallinity because its coherence length (5.8 nm) was 2-3 times higher than those of P1-P3 (1.7-2.9 nm). This led to a best field-effect hole mobility of 0.1 cm(2) V-1 s(-1) for P4 among the four polymers. The polymers P4-P6 had identical molecular formulae of side chains but significant differences in device performance. In comparison with P4, the two linear alkyl chains were moved onto head to head positions of bithiophene in P5, resulting in a hole mobility of only 0.007 cm(2) V-1 s(-1). However, a pair of 2-decyl-tetradecyl alkyl chains was grafted onto thiophene units adjacent to the TQ core in P6, leading to the highest hole mobility up to 0.24 cm(2) V-1 s(-1) in this series of polymers.
机译:在不同的供体部分,取代位置和聚合物侧链结构上,使用Stille偶联反应合成了六种基于噻二唑并喹喔啉(TQ)的共聚物(P1-P6)。 UV-vis-NIR吸收光谱表明,所有这些聚合物均表现出0.96至0.75 eV的低光学带隙。由于相同的TQ核的贡献,这六个聚合物的电子亲和力的值从-3.92到-3.99 eV略有变化。但是,通过引入不同的供体,电离电势从P1中的-4.95 eV调整为P3中的-5.28 eV。将聚合物P1-P4与不同的供体部分进行比较,二维广角X射线散射测量表明P4具有更高的结晶度,因为其相干长度(5.8 nm)比P1-P3(1.7-1.7)高2-3倍。 2.9 nm)。这导致四种聚合物中P4的最佳场效应空穴迁移率为0.1 cm(2)V-1 s(-1)。聚合物P4-P6具有相同的侧链分子式,但器件性能存在显着差异。与P4相比,两条线性烷基链在P5中的联噻吩头到头位置移动,导致空穴迁移率仅为0.007 cm(2)V-1 s(-1)。但是,将一对2-癸基-十四烷基烷基链接枝到P6中与TQ核心相邻的噻吩单元上,从而导致该系列的最高空穴迁移率高达0.24 cm(2)V-1 s(-1)。聚合物。

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