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Adjustment of conformation change and charge trapping in ion-doped polymers to achieve ternary memory performance

机译:调整离子掺杂聚合物中的构象变化和电荷陷阱,以实现三元存储性能

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摘要

Ion-doped poly(4-vinylpyridine) derivatives (P4VPCz), where in the pendant chains the electron-withdrawing pyridine moiety and acceptor carbazole moiety are linked by a flexible alky! spacer were designed and synthesized. Sandwiched ITO/P4VPCz/AI devices, made through simple spin-coating processes have shown that they could be tuned from a binary to ternary memory performance, by increasing the carbazole content. P4VPCz2 with a 20% mole ratio of the carbazole moiety shows a binary performance according to the charge trapping of the pyridine acceptor in the polymer, while P4VPCz5 which contains a 50% mole ratio of carbazole in the pendant chains, exhibits a ternary data storage ability, probably induced by double mechanisms .(i.e. a conformational change and charge trapping). Interestingly, as the carbazole mole ratio reached 80%, the polymer P4VPCz8 has a high conductivity state, with no switching behavior, because of the large amount of doped ions improving the charge transfer mobility. Thus, we hope can offer a guideline to achieve a high-performance multilevel memory material, via combining different mechanisms as well as doping ions.
机译:离子掺杂的聚(4-乙烯基吡啶)衍生物(P4VPCz),其中在侧链中,吸电子吡啶部分和受体咔唑部分通过柔性烷基连接!设计并合成了间隔基。通过简单的旋涂工艺制成的夹层式ITO / P4VPCz / AI器件显示,可以通过增加咔唑含量将它们从二元存储性能调整为三元存储性能。咔唑部分的摩尔比为20%的P4VPCz2根据吡啶受体在聚合物中的电荷俘获显示出二元性能,而在侧链中含有咔唑的摩尔比为50%的P4VPCz5具有三元数据存储能力,可能是由双重机制引起的(即构象变化和电荷陷阱)。有趣的是,当咔唑摩尔比达到80%时,聚合物P4VPCz8具有高电导率状态,没有开关行为,这是因为大量的掺杂离子改善了电荷转移迁移率。因此,我们希望可以通过结合不同的机制以及掺杂离子,为实现高性能的多级存储材料提供指导。

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