SiC line deposition using laser CVD

摘要

This study demonstrates the deposition of silicon carbide (SiC) lines by Laser Chemical Vapor Deposition (LCVD). SiC lines were deposited on a graphite substrate using the precursors methyltrichlorosilane (MTS) and H{sub}2 and were characterized using Scanning Electron Microscopy. To fabricate neat shaped SiC lines, response surface experiments were employed to correlate the volcano effect with laser power, laser scan speed, and MTS concentration. The processing conditions for generating volcano-free SiC lines were determined to be an average temperature of 1020-1100℃ over a circle region of 350 μm in diameter, ratios of H{sub}2/MTS from 13.2 to 30, and laser scan speed from 0.04 to 0.08 in./min.