Surface-channel MESFET with boron-doped contact layer

摘要

In this investigation an attempt has been made to incorporate a high temperature stable refractory metal ohmic contact deposited onto an oxygen terminated contact area into the surface channel field effect transistor concept based on a H-terminated surface in the channel area. First transistors were fabricated. A drain current density of 75 mA/mm and a threshold voltage of V_(th)=-1.5 V was obtained for 1 mu m gate length.