Leakage Current Reduction Techniques for 7T SRAM Cell in 45 nm Technology

摘要

In this paper the impact of gate leakage on 7T static random access memory (SRAM) is described and three techniques for reducing gate leakage currents and sub threshold leakage currents are examined. In first technique, the supply voltage is decreased. In the second techniques the voltage of the ground node is increased. While in third technique the effective voltage across SRAM cell Vd = 0.348V and Vs = 0.234V are observed. In all the techniques the effective voltage across SRAM cell is decreased in stand-by mode using a dynamic self controllable voltage level (SVL) switch. Simulation results based on cadence tool for 45 nm technology show that the techniques in which supply voltage level is reduced is more efficient in reducing gate leakage than the one in which ground node voltage is increased. Result obtained show that 437 FA reductions in the leakage currents of 7T SRAM can be achieved.