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首页> 外文期刊>The journal of physics and chemistry of solids >Synthesis of Cadmium Selenide thin films at low-temperature by simple Chemical route and their Characterization
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Synthesis of Cadmium Selenide thin films at low-temperature by simple Chemical route and their Characterization

机译:硒化镉薄膜的低温化学合成及表征

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Crystalline CdSe thin film has been deposited using appropriate precursor solution containing cadmium sulfate octahydrate, tartaric acid, potassium hydroxide, ammonia and sodium selenosulfate. The effect of parameters such as bath composition, deposition temperature, pH of the solution, speed of the rotation and the specificity of complexing agent on growth process is studied. The 'as-deposited' CdSe thin film was found to be red in color, specularly reflective and well adherent to the glass substrate. The crystalline phase of the deposited sample was hexagonal wurtzite-type. The analysis of optical absorption data shows energy band gap energy (E-g) 2.01 eV. The morphological study and compositional analysis of film sample have been discussed. The electrical resistivity of CdSe thin film was found to the order of 10(6) Omega cm. (c) 2006 Elsevier Ltd. All rights reserved.
机译:已使用适当的前体溶液(包含八水合硫酸镉,酒石酸,氢氧化钾,氨和硒代硫酸钠)沉积了CdSe晶体晶体。研究了浴液组成,沉积温度,溶液的pH,旋转速度和络合剂特异性等参数对生长过程的影响。发现“沉积的” CdSe薄膜为红色,镜面反射,并与玻璃基板良好粘合。沉积样品的结晶相为六方纤锌矿型。对光吸收数据的分析显示,能带隙能量(E-g)为2.01 eV。讨论了薄膜样品的形态学研究和成分分析。发现CdSe薄膜的电阻率约为10(6)Ω·cm。 (c)2006 Elsevier Ltd.保留所有权利。

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