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首页> 外文期刊>The Journal of Chemical Physics >Size-dependent electronic level structure of InAs nanocrystal quantum dots: Test of multiband effective mass theory
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Size-dependent electronic level structure of InAs nanocrystal quantum dots: Test of multiband effective mass theory

机译:InAs纳米晶体量子点的尺寸依赖性电子能级结构:多带有效质量理论的检验

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摘要

The size dependence of the electronic spectrum of InAs nanocrystals ranging in radius from 10-35 Angstrom has been studied by size-selective spectroscopy. An eight-band effective mass theory of the quantum size levels has been developed which describes the observed absorption level structure and transition intensities very well down to smallest crystal size using bulk band parameters. This model generalizes the six-band model which works well in CdSe nanocrystals and should adequately describe most direct semiconductor nanocrystals with band edge at the Gamma-point of the Brillouin zone. (C) 1998 American Institute of Physics. [References: 16]
机译:通过尺寸选择光谱研究了半径为10-35埃的InAs纳米晶体的电子光谱的尺寸依赖性。已经开发了一种量子尺寸能级的八波段有效质量理论,该理论使用体能带参数很好地描述了观察到的吸收能级结构和跃迁强度,直至最小的晶体尺寸。该模型归纳了六波段模型,该模型在CdSe纳米晶体中效果很好,并应充分描述带边缘在布里渊区的伽玛点的大多数直接半导体纳米晶体。 (C)1998美国物理研究所。 [参考:16]

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