An accurate SPICE-compatible circuit model for power FLYMOSFETs

摘要

In this paper, a new SPICE-compatible circuit model for low voltage, low on- resistance power FLYMOSFETs is presented for the. first time. In this new structure, the improvement of the on-resistance has been obtained by inserting. floating islands in the lowly doped layer. Our modelling is based on device physics, analytical study and on experimental characterization. The inter- electrode capacitances are modelled accurately as nonlinear functions, and good agreement between simulation and measurements is found.