首页> 外国专利> Power model for EMI simulation to semiconductor integrated circuit , method of designing the power model, EMI simulator, power model preparation computer program, and storage medium storing the same as well as power model design support system

Power model for EMI simulation to semiconductor integrated circuit , method of designing the power model, EMI simulator, power model preparation computer program, and storage medium storing the same as well as power model design support system

机译:用于半导体集成电路的EMI仿真的功率模型,功率模型的设计方法,EMI模拟器,功率模型准备计算机程序,存储该模型的存储介质以及功率模型设计支持系统

摘要

The present invention provides a power model for a semiconductor integrated circuit, wherein the power model comprises a logic gate circuit part representing an operating part of the semiconductor integrated circuit and an equivalent internal capacitive part representing a non-operating part of the semiconductor integrated circuit.
机译:本发明提供了用于半导体集成电路的功率模型,其中,功率模型包括代表半导体集成电路的操作部分的逻辑门电路部分和代表半导体集成电路的非操作部分的等效内部电容部分。

著录项

  • 公开/公告号US2002011885A1

    专利类型

  • 公开/公告日2002-01-31

    原文格式PDF

  • 申请/专利权人 NEC CORPORATION;

    申请/专利号US20000725463

  • 发明设计人 MASASHI OGAWA;HIROSHI WABUKA;

    申请日2000-11-30

  • 分类号H03H11/26;H03L7/06;

  • 国家 US

  • 入库时间 2022-08-22 00:48:54

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