Prof. Ohaku et al. of Waseda University succeeded in reducing a remarkable fluctuation in impurities due to fine patterning of semiconductors by using their unique single ion implantation method. They implanted impurity ions one by one with an SII to reduce a fluctuation in the electric characteristics. This allows the number and positions of impurity ions to be controlled and implanted in the fine region of a transistor, resulting in the resolution of a drop in the yield due to an unavoidable fluctuation in impurities. Consequently they opened a road to the mass production of transistors in the nanostructure.
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