METHOD OF SUPPRESSING DIFFUSION OF IMPURITIES, AND METHOD OF SELECTIVELY DIFFUSING IMPURITIES INTO SEMICONDUCTOR, AND SEMICONDUCTOR DEVICE, AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the diffusion of impurity boron contained in a BSG film, by implanting nitrogen into the BORO-SILICATE GLASS(BSG) film of an insulating film containing boron as impurity. ;SOLUTION: In the manufacture process of a semiconductor device, a BSG film 24 is stacked all over the surface of a semiconductor substrate 9, with boron as impurity This BSG film 24 is grown in condition that boron is contained in gas by, for example, CVD art. A resist pattern 25 is made to cover a PMOS transistor formation area, and N₂⁺ is implanted, or N⁺ ions are implanted into the BSG film 24. Hereby, as to the section where doping of nitrogen is performed within the BSG film 24, enough effect of suppressing the diffusion of impurities can be obtained. That is, the method of suppressing diffusion of impurities into the semiconductor is one which implants nitrogen into the BSG film being the insulating film containing boron as impurity.;COPYRIGHT: (C)1997,JPO