Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide

摘要

Epitaxial n-GaAs layers with a background impurity concentration of N{sub}D -N{sub}A< 10{sup}15{sup}m3, grown by chloride vapor phase epitaxy in an open system, exhibit correlation between the electrical properties and the long persistence of the edge photoluminescence lines (D{sub}x){sup}0 and (D{sub}h){sup}0 related to the hole trapping centers. An increase in the concentration of such trapping centers in n-GaAs leads to a decrease in the mobility of free charge carriers