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A novel approach for site-specific atom probe specimen preparation by focused ion beam and transmission electron backscatter diffraction

机译:聚焦离子束和透射电子背散射衍射制备特定位置原子探针标本的新方法

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摘要

Atom probe tomography (APT) is a suitable technique for chemical analyses with almost atomic resolution. However, the time-consuming site-specific specimen preparation can be improved. Recently, transmission electron backscatter diffraction (t-EBSD) has been established for high resolution crystal-lographic analyses of thin foils. In this paper we present the first successful application of a combined focused ion beam (FIB)/t-EBSD preparation of site-specific APT specimens using the example of grain boundary segregation in technically pure molybdenum.It will be shown that the preparation of a grain boundary can be substantially accelerated by t-EBSD analyses in-between the annular milling FIB procedure in the same microscope. With this combined method, a grain boundary can easily be recognized and positioned in the first 220 nm of an APT sample much faster than e.g. with complementary investigations in a transmission electron microscope. Even more, the high resolution technique of t-EBSD gives the opportunity to get crystallographic information of the mapped area and, therefore, an analysis of the grain boundary character to support the interpretation of the APT data files. To optimize this newly developed technique for the application on needle-shaped APT specimens, a parameter study on enhanced background correction, acceleration voltage, and tilt angle was carried out. An acceleration voltage of 30 kV at specimen surface tilt angles between -45° and -35° from horizontal plane leads to the best results. Even for molybdenum the observation of crystal orientation data up to about 200 nm specimen thickness is possible.
机译:原子探针层析成像(APT)是一种适用于化学分析的合适技术,几乎具有原子分辨率。但是,可以改进耗时的特定地点的标本制备。最近,已经建立了透射电子背散射衍射(t-EBSD)用于薄箔片的高分辨率晶体学分析。本文以工业纯钼中的晶界偏析为例,介绍了结合聚焦离子束(FIB)/ t-EBSD制备定点APT样品的首次成功应用。通过在同一显微镜下的环形铣削FIB程序之间的t-EBSD分析,可以大大加速晶界。通过这种组合方法,可以容易地识别晶界并将其定位在APT样品的前220 nm中,比例如,以更快的速度进行。在透射电子显微镜中进行补充研究。更重要的是,t-EBSD的高分辨率技术提供了获得映射区域的晶体学信息的机会,因此可以对晶界特征进行分析,以支持APT数据文件的解释。为了优化此新开发的技术以应用于针形APT样品,对增强的背景校正,加速电压和倾斜角进行了参数研究。在与水平面成-45°和-35°之间的样本表面倾斜角度下,30 kV的加速电压可获得最佳结果。即使是钼,也可以观察到高达200 nm的样品厚度的晶体取向数据。

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