8 percent Efficient Thin-Film Poly crystalline-Silicon Solar Cells Based on Aluminum-Induced Crystallization and Thermal CVD

摘要

A considerable cost reduction could be achieved in photovoltaics if efficient solar cells could be made from polycrystalline-silicon (pc-Si) thin films on inexpensive substrates. We recently showed promising solar cell results using pc-Si layers obtained by aluminum-induced crystallization (AIC) of amorphous silicon in combination with thermal chemical vapor deposition (CVD). To obtain highly efficient pc-Si solar cells, however, the material quality has to be optimized and cell processes different from those applied for standard bulk-Si solar cells have to be developed. In this work, we present the different process steps that we recently developed to enhance the efficiency of pc-Si solar cells on alumina substrates made by AIC in combination with thermal CVD. Our present pc-Si solar cell process yields cells in substrate configuration with efficiencies so far of up to 80 percent. Spin-on oxides are used to smoothen the alumina substrate surface to enhance the electronic quality of the absorber layers. The cells have heterojunction emitters consisting of thin a-Si layers that yield much higher V_(oc) values than classical diffused emitters. Base and emitter contacts are on top of the cell in interdigitated finger patterns, leading to fill factors above 70 percent. The front surface of the cells is plasma textured to increase the current density. Our present pc-Si solar cell efficiency of 8 percent together with the fast progression that we have made over the last few years indicate the large potential of pc-Si solar cells based on the AIC seed layer approach.