机译:22‐efficient Cd‐free Cu(In,Ga)(S,Se) sub 2/sub2 solar cell by all‐dry process using Zn sub 0.8/sub0.8 Mg sub 0.2/sub0.2 O and Zn sub 0.9/sub0.9 Mg sub 0.1/sub0.1 O:B as buffer and transparent conductive oxide layers
机译:Time‐varying, ray tracing irradiance simulation approach for photovoltaic systems in complex scenarios with decoupled geometry, optical properties and illumination conditions
机译:Effects of material properties of band‐gap‐graded Cu(In,Ga)Se2 thin films on the onset of the quantum efficiency spectra of corresponding solar cells
机译:On the role of sodium and copper off‐stoichiometry in Cu (In,Ga)S2 for photovoltaic applications: Insights from the investigation of more than 500 samples
机译:Power conversion efficiency of 25.26 for silicon heterojunction solar cell with transition metal element doped indium oxide transparent conductive film as front electrode
机译:The sputter deposition of broadband transparent and highly conductive cerium and hydrogen co-doped indium oxide and its transfer to silicon heterojunction solar cells
机译:Thickness evaluation of AlOx barrier layers for encapsulation of flexible PV modules in industrial environments by normal reflectance and machine learning
机译:Application of metal, metal-oxide, and silicon-oxide based intermediate reflective layers for current matching in autonomous high-voltage multijunction photovoltaic devices
机译:III-V//CuxIn1-yGaySe2 multijunction solar cells with 27.2 efficiency fabricated using modified smart stack technology with Pd nanoparticle array and adhesive material