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首页> 外文期刊>Superlattices and microstructures >320 × 256 high operating temperature mid-infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice
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320 × 256 high operating temperature mid-infrared focal plane arrays based on type-Ⅱ InAs/GaSb superlattice

机译：基于II型InAs / GaSb超晶格的320×256高工作温度中红外焦平面阵列

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摘要

320 × 256 mid-infrared focal plane arrays, together with linear arrays and single element devices, were fabricated based on type-Ⅱ InAs/GaSb superlattice. At 77 K, the diode shows 50% cut-off wavelength of 4.8 μm and peak quantum efficiency of 38% at 3.7 μm without any bias dependence. The dominant dark current mechanisms at different temperatures are identified by RnA analysis. At 160 K, RoA of 2.2 × 10~3 Ω cm~2 and specific detectivity of 1.8 × 10~(11) cm Hz~(0.5)/W are demonstrated. Infrared imaging with an integration time of 5 ms demonstrates noise equivalent temperature difference of 12.3 mK and 34.2 mK, separately at 90 K and 120 K.
机译：基于Ⅱ型InAs / GaSb超晶格制备了320×256个中红外焦平面阵列，线性阵列和单元件器件。在77 K时，该二极管的截止波长为50％，为4.8μm，在3.7μm处的峰值量子效率为38％，没有任何偏置依赖性。通过RnA分析确定了不同温度下的主要暗电流机理。在160 K时，RoA为2.2×10〜3Ωcm〜2，比探测比为1.8×10〜（11）cm Hz〜（0.5）/ W。积分时间为5 ms的红外成像表明，噪声等效温度差分别在90 K和120 K时分别为12.3 mK和34.2 mK。

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  • 来源
    《Superlattices and microstructures》 |2017年第11期|783-788|共6页
  • 作者

    Yaoyao Sun; Guowei Wang; Xi Han; Wei Xiang; Dongwei Jiang; Zhi Jiang; Hongyue Hao; Yuexi Lv; Chunyan Guo; Yingqiang Xu; Zhichuan Niu;

  • 作者单位

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 23026, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 23026, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 23026, China;

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China,College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China,Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 23026, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Mid-infrared; Focal plane arrays; InAs/GaSb superlattice; HOT;

    机译：中红外焦平面阵列;InAs / GaSb超晶格;热;

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