InAs／GaSbII型超晶格红外探测器的研究进展

摘要

InAs/GaSbII型超晶格材料理论上性能优于HgCdTe、InSb等红外探测材料，基于成熟的III-V族化合物材料与器件工艺，使得II型超晶格材料容易满足均匀大面阵、双色或多色集成等红外探测器的要求，因而InAs/GaSbII型超晶格材料将逐步替代HgCdTe、InSb等材料成为第三代红外探测器的首选材料。本文阐述了InAs/GaSb超晶格红外探测器的基本原理、以及材料生长和器件结构，并对其研究进展进行了综述性介绍。%InAs/GaSb type II super-lattice is a novel infrared material with the theoretical promise of better perform-ance than MCT and InSb.In view of the maturity of III-V compound materials growth and device technology,it is easyto obtain InAs/GaSb type II super-lattice material for uniform large formats and dual/multiple color infrared detectors.At present,InAs/GaSb type II super-lattice material is regarded as a primary material for the third generation infrareddetectors,which may gradually replace MCT and InSb.The basic theory,the research on materials growth and devicestructure of InAs/GaSb type II super-lattice infrared detector are presented.Research progress of InAs/GaSb type IIsuper-lattice infrared detector is summarized.