Optical and electronic properties of ZnO:P~+-Si heterostructures fabricated by metalorganic chemical vapour deposition

摘要

ZnO:P~+-Si heterostructures were fabricated on n~+-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current-voltage (Ⅰ-Ⅴ) curve showed current rectification characteristic behaviour.