机译:使用变质InAs缓冲层在GaAs衬底上生长的中红外光谱范围的InSb量子点
Physics Department, Lancaster University, Lancaster LA1 4YB, UK;
Physics Department, Lancaster University, Lancaster LA1 4YB, UK;
Physics Department, Lancaster University, Lancaster LA1 4YB, UK;
Physics Department, Lancaster University, Lancaster LA1 4YB, UK;
Department of Physics, University of Warwick, Coventry CV4 7AL, UK;
Physics Department, Lancaster University, Lancaster LA1 4YB, UK;
quantum dot; mid-infrared; metamorphic growth; interfacial misfit dislocation;
机译:使用GaAsSb变质缓冲层在GaAs衬底上生长的1.55μmInAs量子点
机译:Metalymphic Type-i Inas1-xsbx / Alyin1-yas量子孔的光学性质在GaAs上生长的中红外光谱范围
机译:使用变质缓冲层在GaAs衬底上生长的2.0μm波长InAs量子破折号
机译:在GaAs衬底上发射的INAS量子点的光学和结构性质,在GaAs底物上生长,在
机译:在铝-铟-锑变质缓冲层上生长的中红外镓-铟-锑/铝-镓-铟-锑MQW激光器。
机译:在中红外光谱范围内通过全晶片光致发光映射探测II型InAs / GaInSb W形量子阱的亚单层均匀性
机译:GaAs衬底上生长的变质InAs / InGaAs纳米结构在电信波长处的单量子点发射