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An All-Silicon Passive Optical Diode

机译：全硅无源光电二极管

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摘要

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.
机译：无源光二极管效应对于片上光信息处理将是有用的，但是已经难以实现。使用基于光学非线性的方法，我们演示了在电信波长内最多28分贝的前后传输比。我们的设备使用两个半径为5微米的硅环，是无源的，但在很宽的输入功率范围内仍保持光学互易性，即使后向输入功率高于前向输入，其性能也相当好。硅光学二极管非常紧凑，并且与当前的互补金属氧化物半导体工艺兼容。

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  • 来源
    《Science》 |2012年第6067期|p.447-450|共4页
  • 作者

    Li Fan; Jian Wang; Leo T. Varghese; Hao Shen; Ben Niu; Yi Xuan; Andrew M. Weiner; Minghao Qi;

  • 作者单位

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA,Schoot of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907,USA,Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050,China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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