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Two-photon absorption in single site-controlled InGaN/GaN quantum dots

机译:单点控制InGaN / GaN量子点中的双光子吸收

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摘要

We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells.
机译:我们提出了使用双光子激发在单个位置控制的InGaN / GaN量子点上进行微光致发光的测量。此外,还介绍了光致发光激发和时间分辨的光致发光的测量。我们表明,双光子激发导致完全抑制来自量子点耦合的基础量子阱的发射,并且具有强量子点发射。我们将这种效应归因于与量子阱相比由于零维限制而增强了量子点中的双光子吸收。

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