机译:迁移增强外延生长的GaAsBi基结构中的铋量子点和强红外光致发光
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;
GaAsBi; Molecular beam epitaxy; Migration-enhanced epitaxy; Rapid thermal annealing; Photoluminescence;
机译:迁移增强分子束外延和常规分子束外延生长的InAs量子点的结构和光学性质的比较
机译:由于润湿层中的载流子局部化,通过迁移增强的外延生长的InGaAs / GaAs量子点的延迟发射
机译:利用迁移增强外延生长的InGaAs / GaAs量子点润湿层中的载流子动力学
机译:通过分子束外延生长的堆叠INAS自组装量子点结构的异常温度依赖性光致发光特性
机译:基于III型氮化物量子点和分子束外延生长的量子阱的LED。
机译:分子束外延生长的自组装硒化铋(Bi2Se3)量子点
机译:生长循环对使用迁移增强外延生长的INP / INGAP量子结构发光性能的影响