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FDTD analysis of the electrical performance for interconnection lines in multichip module (MCM) with perforated reference planes

机译:FDTD分析带穿孔参考平面的多芯片模块(MCM)中互连线的电气性能

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摘要

A finite difference time domain (FDTD) approach is demonstrated for analysis of the electrical performance of interconnection lines and the extraction of their equivalent circuit parameters in a multichip-module (MCM) with perforated reference planes. By making an equivalence between uniform and nonuniform interconnection lines and an equivalence between nonuniform interconnection lines and actual physical interconnection lines' structure, the equivalent distributed circuit parameters and transmission characteristic parameters can be obtained from the fields calculated by the FDTD method. The results are compared with those obtained by other methods. The dispersive characteristics of such interconnection lines with perforated reference planes and the coupling between interconnection lines on different layers is also studied in this paper.
机译:演示了一种有限差分时域(FDTD)方法,用于分析互连线的电性能,并在带有穿孔参考平面的多芯片模块(MCM)中提取其等效电路参数。通过使均匀互连线和非均匀互连线之间的等价关系以及非均匀互连线与实际物理互连线的结构之间的等价关系,可以从通过FDTD方法计算出的字段中获得等效的分布式电路参数和传输特性参数。将结果与通过其他方法获得的结果进行比较。本文还研究了这种带有穿孔参考平面的互连线的色散特性以及互连线在不同层上的耦合。

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