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The Reaction of Tetrakis(dimethylamido)titanium with Self-Assembled Alkyltrichlorosilane Monolayers Possessing-OH,-NH_2,and -CH_3 Terminal Groups

机译:四(二甲基氨基)钛与具有-OH,-NH_2和-CH_3端基的自组装烷基三氯硅烷单层的反应

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摘要

The reactions of tetrakis(dimethylamido)titaniurn,Ti[N(CH_3)_2]_4,with alkyltrichlorosilane self-assembled monolayers (SAMs) terminated by -OH,-NH_2,and -CH_3 groups have been investigated with X-ray photoelectron spectroscopy (XPS).For comparison,a chemically oxidized Si surface,which serves as the starting point for formation of the SAMs,has also been investigated.In this work,we examined the kinetics of adsorption,the spatial extent,and stoichiometry of the reaction.Chemically oxidized Si has been found to be the most reactive surface examined here,followed by the -OH,-NH_2,and -CH_3 terminated SAMs,in that order.On all surfaces,the reaction of Ti[N(CH_3)_2]_4 was relatively facile,as evidenced by a rather weak dependence of the initial reaction probability on substrate temperature (T_s = -50 to 110 deg C),and adsorption could be described by first-order Langmuirian kinetics.The use of angle-resolved XPS demonstrated clearly that the anomalous reactivity of the -CH_3 terminated SAM could be attributed to reaction of Ti[N(CH_3)_2]_4 at the SAM/SiO_2 interface.Reaction on the -NH_2 terminated SAM proved to be the "cleanest",where essentially all of the reactivity could be associated with the terminal amine group.In this case,we found that approximately one Ti[N(CH_3)_2]_4 adsorbed per two SAM molecules.On all surfaces,there was significant loss of the N(CH_3)_2 ligand,particularly at high substrate temperatures,T_s = 110 deg C.These results show for the first time that it is possible to attach a transition metal coordination complex from the vapor phase to a surface with an appropriately functionalized self-assembled monolayer.
机译:用X射线光电子能谱研究了四(二甲基氨基)钛锡,Ti [N(CH_3)_2] _4与以-OH,-NH_2和-CH_3基团终止的烷基三氯硅烷自组装单分子膜(SAMs)的反应(为了进行比较,还研究了化学氧化的硅表面,该表面作为形成SAM的起点。在这项工作中,我们研究了反应的吸附动力学,空间范围和化学计量。发现化学氧化的Si是此处检查的最活跃的表面,其后依次是-OH,-NH_2和-CH_3封端的SAM。在所有表面上,Ti [N(CH_3)_2] _4的反应初始反应概率对底物温度的依赖性较弱(T_s = -50至110摄氏度),证明了吸附相对容易,吸附可以通过一阶La​​ngmuirian动力学来描述。显然,-CH_3终止了SAM的反常活性可能是由于Ti [N(CH_3)_2] _4在SAM / SiO_2界面上的反应所致。-NH_2端基SAM的反应被证明是“最清洁的”,其中所有反应性都可能与末端胺有关在这种情况下,我们发现每两个SAM分子大约吸附一个Ti [N(CH_3)_2] _4。在所有表面上,N(CH_3)_2配体都有明显的损失,特别是在高底物温度下,T_s = 110摄氏度。这些结果首次表明,可以通过适当官能化的自组装单层将气相的过渡金属配位络合物附着在表面上。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2005年第17期|p.6300-6310|共11页
  • 作者单位

    Contribution from the School of Chemical and Biomolecular Engineering,Cornell University,Ithaca,New York 14853;

    Contribution from the School of Chemical and Biomolecular Engineering,Cornell University,Ithaca,New York 14853;

    Contribution from the School of Chemical and Biomolecular Engineering,Cornell University,Ithaca,New York 14853;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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