High Electron Mobility In Vacuum And Ambient For Pdif-cn_2 Single-crystal Transistors

摘要

Semiconductor devices based on organic molecules are of interest for large area electronics as well as to underscore fundamental charge transport effects in molecular solids. The field-effect transistor (FET, Figure 1) is an electronic device where the current between the source and drain contacts (I_D), for a given source-drain voltage (V_(DS)). is modulated by the application of the gate-source bias (V_(GS))- In this device one of the key figures of merit is the field-effect mobility (μ_(FET)), which should be as large as possible to enable the fabrication of devices with greater performance. Using the FET architecture, the carrier mobilities of several polycrystalline/amorphous p-channel (charge = hole) and n-channel (charge = electron) organic semiconductor films have been tested. Although FETs based on polycrystalline organic semiconductor will probably be the first to be implemented into a commercial product, FETs based on single-crystal organic semiconductors are far more interesting to probe ultimate charge transport efficiencies.