Single-crystal field-effect transistors based on a fused-ring electron acceptor with high ambipolar mobilities

摘要

In this study, we successfully obtained the single crystal of a well-known fused-ring electron acceptorY6and realized high ambipolar charge transports in single-crystal organic field-effect transistors (SC-OFETs). These were achieved by growing the single crystal ofY6viaa simple solvent evaporation method and then using a "gold trips sticking" technique. We found that in the single crystal structureY6exhibited two isomers with a chiral symmetry (M- orP-enantiomer), which were responsible for the two-dimensional porous networks. The hierarchical structures could be favorable for charge transport along pi-pi stacking directions, as confirmed by SC-OFETs: high ambipolar mobilities with a hole mobility of 0.84 cm(2)V(-1)s(-1)and an electron mobility of 1.94 cm(2)V(-1)s(-1)were obtained. This could be further used as phototransistors with a high responsivity of 1.2 x 10(3)A W(-1)and a photosensitivity of 2.1 x 10(4).