Current improvement of porous silicon photovoltaic devices by using double layer porous silicon structure: applicable in porous silicon solar cells

摘要

The photoluminescence (PL) phenomena of porous silicon (PS) samples with different etching times were examined to find out a relationship between PL emission energy (experimental value of PS band gap energy) and the etching time for fabrication of double (two) layer porous silicon sample on one silicon substrate. The dependence of PL Peak energy with etching time was discussed. A double layer PS structure was formed by using two electrochemical reactions with different etching times of 20 and 10 min, respectively. The photovoltaic (PV) properties of mono layer and double layer porous silicon PV devices were examined and compared. The main result is the enhanced short-circuit current (I_(sc)) of double layer PS structure compared to monolayer ones.